| PART |
Description |
Maker |
| MB85415 |
16384 Words x 36-Bit
|
Fujitsu
|
| MSM53V1655F |
524,288-Double Words x 32-bit or 1,048,576-Words x 16-bit MaskROM 4Double Words x 32-Bit or 8Words x 16-Bit/Page Mode MASKROM
|
OKI electronic componets
|
| M5L27128K M5L27128K-2 |
131 072-BIT(16384-WORD BY 8-BIT) ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
|
Mitsubishi Electric Semiconductor
|
| HM6167LP-8 HM6167P-6 HM6167P-8 |
16384-word x 1-bit high speed CMOS static RAM, 100ns
16384-word x 1-bit high speed CMOS static RAM, 85ns
|
Hitachi Semiconductor
|
| UPB409C UPB409D UPB429C UPB429D |
16384 BIT BIPOLAR TTL
|
NEC
|
| SPR016 |
16384 Bit Serial ROM
|
General Semiconductor
|
| MB71A38-25 MB71A38-35 |
PROGRAMMABLE SCHOTTKY 16384-BIT READ ONLY MEMORY
|
Fujitsu Component Limited.
Fujitsu Media Devices Limited
|
| HM6267LP-35 HM6267LP-45 HM6267LP-55 HM6267P-35 HM6 |
16384-word x 1-bit High Speed CMOS Static RAM
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| THM321000S-10 THM321000S-80 THM321000SG-10 THM3210 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
1,048,576 WORDS x 32 BIT DYNAMIC RAM MODULE
1/048/576 WORDS x 32 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| GM71V17403C GM71V17403C-5 GM71V17403C-6 GM71V17403 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M
x4 EDO Page Mode DRAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
